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 VEMT3700F
Vishay Semiconductors
Silicon NPN Phototransistor, RoHS Compliant
FEATURES
* * * * * * * * * * * * Package type: surface mount Package form: PLCC-2 Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 High radiant sensitivity Fast response times Daylight blocking filter matched with 870 nm to 950 nm emitters Angle of half sensitivity: = 60 Package notch indicates collector Package matched with IR emitter series VSML3710 Floor life: 4 weeks, MSL 2a, acc. J-STD-020 Lead (Pb)-free reflow soldering Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC Photo interrupters Miniature switches Counters Encoders Position sensors
19032
DESCRIPTION
VEMT3700F is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-2 package. The integrated daylight blocking filter is matched to 950 nm IR emitters.
APPLICATIONS
* * * * *
PRODUCT SUMMARY
COMPONENT VEMT3700F Note Test conditions see table "Basic Characteristics" Ica (mA) 0.5 (deg) 60 0.5 (nm) 850 to 1050
ORDERING INFORMATION
ORDERING CODE VEMT3700F-GS08 VEMT3700F-GS18 Note MOQ: minimum order quantity PACKAGING Tape and reel Tape and reel REMARKS MOQ: 7500 pcs, 1500 pcs/reel MOQ: 8000 pcs, 8000 pcs/reel PACKAGE FORM PLCC-2 PLCC-2
ABSOLUTE MAXIMUM RATINGS
PARAMETER Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 C, unless otherwise specified Acc. reflow solder profile fig. 10 Soldered on PCB with pad dimensions: 4 mm x 4 mm tp/T 0.1, tp 10 s TEST CONDITION SYMBOL VCEO VECO IC ICM PV Tj Tamb Tstg Tsd RthJA VALUE 70 5 50 100 100 100 - 40 to + 100 - 40 to + 100 260 400 UNIT V V mA mA mW C C C C K/W
www.vishay.com 526
For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81584 Rev. 1.5, 04-Sep-08
VEMT3700F
Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors
125
PV - Power Dissipation Limit (mW)
R thJA = 400 K/W
100
75
50
25 0 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (C)
20376
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER Collector emitter breakdown voltage Collector emitter dark current Collector emitter capacitance Collector ligth current Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Collector emitter saturation voltage Ee = 1 mW/cm2, = 950 nm, IC = 0.1 mA VS = 5 V, IC = 1 mA, = 950 nm, RL = 1 k VS = 5 V, IC = 1 mA, = 950 nm, RL = 100 VS = 5 V, IC = 2 mA, RL = 100 TEST CONDITION IC = 1 mA VCE = 20 V, E = 0 VCE = 5 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2, = 950 nm, VCE = 5 V SYMBOL V(BR)CEO ICEO CCEO Ica p 0.5 VCEsat tr/tf tr/tf fc 0.25 MIN. 70 1 3 0.5 60 940 850 to 1050 0.15 6 2 180 0.3 200 TYP. MAX. UNIT V nA pF mA deg nm nm V s s kHz
Rise time, fall time
Cut-off frequency Note Tamb = 25 C, unless otherwise specified
BASIC CHARACTERISTICS
Tamb = 25 C, unless otherwise specified
104 ICEO - Collector Dark Current (nA) Ica rel - Relative Collector Current
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6
94 8239
103 VCE = 20 V 102
VCE = 5 V Ee = 1 mW/cm2 = 950 nm
101
10
94 8304
20
40
60
80
100
0
20
40
60
80
100
Tamb - Ambient Temperature (C)
Tamb - Ambient Temperature (C)
Fig. 2 - Collector Dark Current vs. Ambient Temperature Document Number: 81584 Rev. 1.5, 04-Sep-08
Fig. 3 - Relative Collector Current vs. Ambient Temperature www.vishay.com 527
For technical questions, contact: detectortechsupport@vishay.com
VEMT3700F
Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant
10 Ica - Collector Light Current (mA) ton/toff - Turn-on/Turn-off Time (s)
8 VCE = 5 V RL = 100 = 950 nm
1
6
0.1 V CE = 5 V = 950 nm
4 toff 2 ton 0 0 2 4 6 8 10 12 14
0.01
0.001 0.01
94 8316
0.1
1
10
E e - Irradiance (mW/cm)
94 8293
IC - Collector Current (mA)
Fig. 4 - Collector Light Current vs. Irradiance
Fig. 7 - Turn-on/Turn-off Time vs. Collector Current
10 S ( ) rel - Relative Spectral Sensitivity 100 I ca - Collector Light Current (mA)
1.2 1.0 0.8 0.6 0.4 0.2 0 750
= 950 nm
1
Ee = 1 mW/cm 0.5 mW/cm 0.2 mW/cm
0.1 0.1
94 8317
1
10
850
950
1050
1150
VCE - Collector Emitter Voltage (V)
94 8408
- Wavelength (nm)
Fig. 5 - Collector Light Current vs. Collector Emitter Voltage
Fig. 8 - Relative Spectral Sensitivity vs. Wavelength
CCEO - Collector Emitter Capacitance (pF)
10 f = 1 MHz
Srel - Relative Sensitivity
0
10
20 30
- Angular Displacement
8
40 1.0 0.9 0.8 0.7 50 60 70 80
6
4
2
0 0.1
1
10
100
94 8318
0.6
0.4
0.2
0
94 8294
VCE - Collector Emitter Voltage (V)
Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage
Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement
www.vishay.com 528
For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81584 Rev. 1.5, 04-Sep-08
VEMT3700F
Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
Mounting Pad Layout 1.2 area covered with solder resist
2.6 (2.8)
4 1.6 (1.9)
20873
SOLDER PROFILE DRYPACK
300 250 255 C 240 C 217 C max. 260 C 245 C
Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant.
Temperature (C)
200 max. 30 s 150 max. 120 s 100 50 0 0 50 100 150 200 250 300 max. ramp up 3 C/s max. ramp down 6 C/s max. 100 s
FLOOR LIFE
Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 4 weeks Conditions: Tamb < 30 C, RH < 60 % Moisture sensitivity level 2a, acc. to J-STD-020.
DRYING
Time (s)
19841
Fig. 10 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020D
In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 C (+ 5 C), RH < 5 %.
www.vishay.com 529
Document Number: 81584 Rev. 1.5, 04-Sep-08
For technical questions, contact: detectortechsupport@vishay.com
4
VEMT3700F
Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant
TAPE AND REEL
PLCC-2 components are packed in antistatic blister tape (DIN IEC (CO) 564) for automatic component insertion. Cavities of blister tape are covered with adhesive tape.
120 10.0 9.0
4.5 3.5 2.5 1.5
13.00 12.75 63.5 60.5
Adhesive tape
Blister tape
Identification Label: Vishay type group tape code production code quantity
180 178
14.4 max.
94 8665
Fig. 14 - Dimensions of Reel-GS08
Component cavity
94 8670
Fig. 11 - Blister Tape
120
3.5 3.1 2.2 2.0
10.4 8.4
4.5 3.5 2.5 1.5
4.0 3.6
13.00 12.75 62.5 60.0
5.75 5.25 3.6 3.4
1.85 1.65
8.3 7.7
1.6 1.4
4.1 3.9
2.05 1.95
4.1 3.9
0.25
94 8668
Identification Label: Vishay type group tape code production code quantity
321 329
14.4 max.
18857
Fig. 12 - Tape Dimensions in mm for PLCC-2
Fig. 15 - Dimensions of Reel-GS18
MISSING DEVICES
A maximum of 0.5 % of the total number of components per reel may be missing, exclusively missing components at the beginning and at the end of the reel. A maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components.
De-reeling direction
94 8158
COVER TAPE REMOVAL FORCE
The removal force lies between 0.1 N and 1.0 N at a removal speed of 5 mm/s. In order to prevent components from popping out of the blisters, the cover tape must be pulled off at an angle of 180 with regard to the feed direction.
> 160 mm 40 empty compartments min. 75 empty compartments
Tape leader
Carrier leader
Carrier trailer
Fig. 13 - Beginning and End of Reel
The tape leader is at least 160 mm and is followed by a carrier tape leader with at least 40 empty compartments. The tape leader may include the carrier tape as long as the cover tape is not connected to the carrier tape. The least component is followed by a carrier tape trailer with a least 75 empty compartments and sealed with cover tape.
www.vishay.com 530 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81584 Rev. 1.5, 04-Sep-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
www.vishay.com 1


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